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For large OLEDs, the amorphous InGaZnO (a‐IGZO) thin film
transistor is considered as the next generation of flexible
backplane technology due to its high mobility, good uniformity,
low off‐state current and low process temperature. However, the
reliability of a‐IGZO TFT with OLED flexible encapsulation
material is inferior at high temperature, which is speculated that
the downward diffusion...
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