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In this work, the performance of GaN-based MOS-Channel-HEMTs (MOSC-HEMTs) are shown to be greatly improved by a thin ALD-grown AlN interfacial layer inserted between the amorphous Al2O3 gate dielectric and GaN-channel. The single-crystalline AlN interfacial layer effectively blocks oxygen from the GaN surface and avoids the formation of detrimental Ga-O bonds. Frequency-dispersion in C-V characteristics...
In this paper, vertically AlN nanocone arrays have been successfully fabricated at 550degC. They are all single crystals with a wurtzite structure and grow along [0001] orientation. These AlN nanocones are found to have good field emission behaviors, suggesting they could be excellent cathode nanomaterials in future.
Reports the nearly ideal electrical characteristics of p-Ge/N-GaAs heterojunction diodes grown by molecular beam epitaxy. The temperature and device size dependencies of the current-voltage characteristics have been investigated. At room temperature, unity ideality factor has been demonstrated over almost six decades of current.<<ETX>>
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