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Oxygen doped GaN has been grown by metalorganic chemical vapor deposition using N2O as oxygen dopant source. The layers were deposited on 2″ sapphire substrates from trimethylgallium and especially dried ammonia using nitrogen (N2) as carrier gas. Prior to the growth of the films, an AIN nucleation layer with a thickness of about 300Å was grown using trimethylaluminum. The films were deposited at...
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