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The behavior of deep level defects by a voltage-induced stress for CuInGaSe2 (CIGS) solar cells has been investigated. CIGS solar cells were used with standard structures which are Al-doped ZnO/i-ZnO/CdS/CIGSe2/Mo on soda lime glass, and that resulted in conversion efficiencies as high as 16%. The samples with the same structure were isothermally stressed at 100°C under the reverse voltages. The voltage-induced...
Hydrogen effects on deep level defects and a defect generation in proton implanted Cu(In,Ga)Se 2 (CIGS) based thin films for solar cell were investigated. CIGS films with a thickness of 3μm were grown on a soda-lime glass substrate by a co-evaporation method, and then were implanted with protons. To study deep level defects in the proton implanted CIGS films, deep level transient spectroscopy...
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