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Memristor technology is a promising alternative to CMOS due to its high integration density, near-zero standby power, and ability to implement novel resistive computing. One of the major limitations of these architectures is the limited endurance of memristor devices, especially when a logic gate requires multiple steps/switching to execute the logic operations. To alleviate the endurance requirement...
As today's CMOS technology is scaling down to its physical limits, it suffers from major challenges such as increased leakage power and reduced reliability. Novel technologies, such as memristors, nanotube, and graphene transistors, are under research as alternatives. Among these technologies, memristor is a promising candidate due to its great scalability, high integration density and near-zero standby...
From the varying threshold voltage of MOSFET caused by the external factor, this paper analyzes the variation tendency of amplifier's gain. It makes clear how the gain of three different amplifiers changes in theoretical. After that, EDA tools are utilized to verify the theoretical calculation. The theoretical and simulation result show that threshold voltage(Vth) is a sensitive parameter of amplifier's...
As a basic logic unit of integrated circuit, the stability of parameters of inverter have a direct effect on the performance of system. This paper starts from parametric drift of traditional inverter caused by the variation of threshold voltage of MOSFET. Then a new parametric drift-resistant inverter is proposed. This structure utilizes compensation circuit to solve parametric drift such as the decrease...
As the CMOS technology is gradually scaling down to inherent physical device limits, significant challenges emerge related to scalability, leakage, reliability, etc. Alternative technologies are under research for next-generation VLSI circuits. Memristor is one of the promising candidates due to its scalability, practically zero leakage, non-volatility, etc. This paper proposes a novel design methodology...
Thin-film transistors based on anodized indium-tin-oxide (ITO) active layer and anodic tantalum oxide (Ta2O5) gate dielectric were investigated. The electrical and optical properties of ITO film can be affected by an anodization treatment. The anodized ITO TFT shows an on/off current ratio of 108, a saturation mobility of 28.8 cm2V−1s−1, a subthreshold swing of 0.51 V/dec, and a threshold voltage...
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