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To clarify the electronic structure of metallic heavily boron (B)-doped diamonds, the discrete variational (DV)-Xα method was used to analyze the continuous X-ray absorption near edge structure (XANES) in the BK and CK regions of a 71,000-ppm B-doped diamond. The continuous XANES profiles are well reproduced by the unoccupied B2p- and C2p-DOS of the caged B-cluster models, in which an octahedron B...
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