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For the first time, ultra low IOFF (16.5 pA/mum) and high IONN,P (2.27 mA/mum and 1.32 mA/mum) currents are obtained with a multi-channel CMOSFET (MCFET) architecture on SOI with a metal/high-K gate stack. This leads to the best ION/IOFF ratios ever reported: 1.4 times 108 (0.8 times 108) for 50 nm n- (p-) MCFETs. We show, based on specifically developed integration process, characterization methods...
In this paper, we demonstrate the first successful integration of "localized SOI" devices integrated with HfO2/TiN gate stack on dedicated areas of bulk CMOS substrates. We propose a low cost innovative approach based on the SON technology, where the buried sacrificial SiGe layer can be removed directly from the edges of the active area in a self-aligned process, to form an entire fully-depleted...
We have integrated 3D low power multi-channel field effect transistors (MCFETs) with TiN/HfO2 gate stacks. We present, for the first time, a general analytical model explaining quantitatively the experimental current gain of this architecture compared to an optimized planar FD-SOI reference with the same gate stack. The gain is highly dependant on gate and drain voltages. The impact of the series...
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