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In this work, tantalum nitride (TaN) was chosen as the wet etch stop layer (WESL) for its application in the 22 nm and beyond nodes CMOS technology. TaN WESL prevents the attacking of titanium nitride (TiN)/hafnium dioxide (HfO 2 ) stack covering n-channel MOS (nMOS) regions from selectively stripping work function metals of p-channel MOS (pMOS) gate, i.e. TiN & titanium (Ti), by ammonia...
For graphene films, the change of crystal structure induced by ion bombardment as well as the doping and strain generated in thermal annealing process is addressed in this work. Experimental results show that both the structure and number of defects for graphene depends strongly on the ion dose. Furthermore, it is found that the structure defects caused by ion bombardment in graphene can be healed...
Ni(Pt)Si1−xGex films with 5 at% Platinum (Pt) were prepared using a two-step annealing scheme. By monitoring the variation of sheet resistance (Rsh) with the Rapid Thermal Annealing (RTA) temperature, an optimal germanosilicidation process i.e. RTA1 at 300 °C/60 s and RTA2 at 400 °C/30 s was determined. The as-prepared Ni(Pt)Si1−xGex films were examined by means of X-ray diffraction (XRD) for crystallinity,...
Trimethylaluminum (TMAl) pre-seeding time, an important factor in controlling the quality such as morphology and dislocation of AlN on Si(111) substrate, was systematically investigated. It was revealed that different TMAl pre-seeding time indeed lead to substantially different AlN quality in terms of morphology and threading dislocations. For the optimized TMAl pre-seeding time 40 s in this work,...
A modified scheme to tune the Schottky Barrier Height (SBH) of NiSi effectively by means of dopant segregation (DS) technique is presented. This scheme consists of the following steps: (1) The deposited Ni films undergo a rapid thermal anneal (RTA1) at 300 °C/60 s to form Ni-rich silicide followed by removal of un-reacted Ni; (2) implant boron (B) or arsenic (As) into pre-formed Ni-rich silicide and...
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