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This paper reports circuit design and packaging techniques for multi-ten gigabit per second (Gbps) data reception in sub-millimeter-wave bands, aiming at short-range wireless communications. A common-gate (CG) amplifier with shielded signal pads for flip-chip (FC) mounting was developed in 75-nm Indium Phosphide high electron mobility transistor (InP HEMT) technology. The CG amplifier exhibited a...
A broad band, single fundamental mixer is developed by using 75-nm InP HEMT technology for use in precise spectrum analysis at frequencies above 110 GHz. The mixer has a diplexer at the drain terminal separating LO/RF signals from an IF signal and functions in both resistive and drain-LO-injection modes. In the drain-LO-injection mode, a conversion loss of 3 dB is measured on-chip. The mixer exhibits...
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