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This paper describes the use of InP HEMT technology to develop submillimeter-wave amplifier circuits. The amplifiers are designed using common-gate amplifiers with series inductors, which achieve both high gain and wide bandwidth. Two submillimeter-wave amplifiers are designed. One is a D-band amplifier that achieves a small-signal gain of 15 dB at 160 GHz and a −3 dB bandwidth of 89 GHz between 105...
This paper describes the use of InP HEMT technology to develop submillimeter-wave amplifier circuits. The amplifiers are designed using common-gate amplifiers with series inductors, which achieve both high gain and wide bandwidth. Two submillimeter-wave amplifiers are designed. One is a D-band amplifier that achieves a small-signal gain of 15 dB at 160 GHz and a −3 dB bandwidth of 89 GHz between 105...
This paper describes the use of InP HEMT technology to develop sub millimeter-wave amplifier circuits. The amplifiers are designed using common-gate amplifiers with series inductors, which achieve both high gain and wide bandwidth. Two submillimeter-wave amplifiers are designed. One is a D-band amplifier that achieves a small-signal gain of 15 dB at 160 GHz and a −3 dB bandwidth of 89 GHz between...
This paper describes the use of InP HEMT technology to develop submillimeter-wave amplifier circuits. The amplifiers are designed using common-gate amplifiers with series inductors, which achieve both high gain and wide bandwidth. Two submillimeter-wave amplifiers are designed. One is a D-band amplifier that achieves a small-signal gain of 15 dB at 160 GHz and a −3 dB bandwidth of 89 GHz between 105...
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