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Ultra-short pulsed laser ablation and micromachining of n-type, 4H-SiC wafer was performed using a 1552nm wavelength, 2ps pulse, 5μJ pulse energy erbium-doped fiber laser with an objective of rapid etching of diaphragms for pressure sensors. Ablation rate, studied as a function of energy fluence, reached a maximum of 20nm per pulse at 10mJ/cm 2 , which is much higher than that achievable by...
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