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ZnO thin films doped with Al concentrations of 1.0, 2.0, 3.0, 4.0, 5.0at% were prepared by a sol–gel spin-coating method on glass substrates and respectively annealed at 550°C for 2h in hydrogen and air. The X-ray diffraction and selected-area electron diffraction results confirm that the Al doped ZnO thin films are of wurtzite hexagonal ZnO. The scanning electron microscope results indicate that...
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