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With an aim of decreasing the temperature (Tγ) at which metallic Y reacts with H2 to form the semiconductor phase YH3−δ, we employed Pd and Ni co-capping layers as catalysts, and compared the result with those obtained when employing Pd or Ni single-capping layers. These Y films capped with three types of catalytic layers were deposited by electron beam evaporation, and subsequently hydrogenated at...
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