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Device performance of GaAs metal-semiconductor field effect transistors (MESFETs) grown by metalorganic chemical vapour deposition (MOCVD) on InP substrates using tertiarybutylarsine (t-BuAsH/sub 2/) is reported. The 1 mu m gate FETs have a maximum extrinsic transconductance of 135 mS/mm and an output transconductance of 5.5 mS/mm. A frequency of unity current gain of 11 GHz and a maximum frequency...
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