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The behavior of the dopants Si, C, and Be upon re-evaporation of correspondingly doped GaAs was studied. The samples were prepared on semi-insulating GaAs (100) by using molecular beam epitaxy (MBE) technique and focused ion beam (FIB) implantation, and were studied by Hall measurement and Secondary Ion Mass Spectroscopy. It was found that a significant fraction of dopant atoms (Si, C, or Be) was...
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