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Metal-insulator-semiconductors structures (MIS) with a layer of silicon nanocrystals embedded within two SiO2 layers are fabricated by using plasma enhanced chemical vapor deposition. By using current-voltage (I-V) measurements with different sweep rates, we study the mechanism of electrons and holes charging/discharging characteristic of the MIS structures. Distinct current peaks duo to electrons...
We report the observation of various quantum behaviors of nanocrystalline silicon/crystalline silicon heterostructure diodes. Tunneling has been proved to be the dominant transport mechanism for the device-grade diode operating below 80 K. For the sample which is composed by highly ordered nanocrystalline silicon, interesting physical phenomena have been revealed, which include high electron mobility,...
In this work, we investigated the preparation and characterization of nanodiamond thin films on silicon substrate and then studied the electron field emission. We concluded that nanodiamond surface sp2 or sp3 hybridization play an important role in field emission, and some intrinsic relationship between top surface chemical state and emission feature will be established in our future research.
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