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In this work, we report a feasible compact solution to enhance the dynamic performance of GaN-on-Si power devices by integrating a photon source into the drain terminal of a heterojunction field-effect transistor (FET). Photons can be generated from the photonic-ohmic drain (POD) synchronously with turning on of the channel current. These on-chip generated photons can optically pump the electron traps,...
We present the first AlGaN/GaN tunnel-junction FETs (TJ-FETs) featuring a metal-2-D-electron-gas (2DEG) Schottky tunnel junction at the source. The control of the source-to-drain current flow is realized through a gate-controlled tunnel junction instead of a gate-controlled 2DEG channel. The TJ-FETs exhibit normally off operation (Vth = +1.35 V) in an otherwise normally on as-grown sample. The unique...
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