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Electromechanical properties of the relaxor ferroelectric poly(vinylidene fluoride–trifluoroethylene–chlorofluoroethylene) [P(VDF-TrFE-CFE)] terpolymer blended with a small amount of poly(vinylidene fluoride-chlorotrifluoroethylene) [P(VDF-CTFE)] copolymer, which possesses a much higher elastic modulus than that of the neat terpolymer, were investigated. It was observed that the presence of small...
Growth of GaN on silicon is investigated to realize semiconductor device on silicon substrate. Our experiment's emphasis is focused on different of structure of interlayer on Si(111) substrate to growth high quality GaN layer. For the large mismatch coefficient between of Si and GaN, which result in the crake and defect. By investigating the different structure, we can draw a conclusion on what kind...
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