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Radiation hardness of active EEE electronic devices with regards to space environment is characterized according to two main aspects: cumulated effects and single event effects. The radiation qualification process includes Total Ionizing Dose (TID), Total Non-Ionizing Dose (TNID) and Single Event Effect (SEE) tests, usually performed independently. The aim of this study is to evaluate the potential...
This paper presents the single-event upset characterization of a commercial field programmable gate array (FPGA) using electron radiation. FPGA radiation test results under high energy electrons are described and the dependence between electron energy and SEU cross section is highlighted. A technological cross section is performed to evaluate the back end of line (BEOL) layers composition and thickness...
3D-TSV technologies promise increased system integration at lower cost and reduced footprint. One of the most likely applications of 3D technology is the integration DRAM-on-logic. Thermal management issues are considered one of the potentially showstoppers for 3D-integration. In this paper, we present a thermal experimental and modeling characterization of a packaged DRAM on logic stack. The DRAM...
The paper describes the design challenges for a low-cost 3D Cu-TSV technology. Based on experimental characterization, we'll indicate the importance of extending the chip package co-design flow with thermo-mechanical simulations of the chip stack. We propose a new design flow hereto which leverages information captured by “smart mechanical samples” .
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