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Wide bandgap semiconductors such as silicon carbide, gallium nitride and diamond have been recently investigated in order to replace silicon in the power electronic domain. In this paper, silicon carbide devices are studied using an optical method. It consists on illuminating a reverse biased junction with a laser beam with an appropriate wavelength, and then measuring the induced current due to the...
The development of high voltage devices is a great challenge. At least, railway and smart grids are examples of applications requiring high voltage devices. SiC power devices and technology seem to be mature enough to give a short term solution. Indeed, silicon carbide devices appear to be the semiconductor of choice for high voltage (> 6.5 kV) applications compared to Gallium Nitride. Diamond...
Silicon carbide presents electrical properties suitable for many applications especially for high voltage devices. 6H–SiC P + NN + structures have been fabricated following ISE software simulations in order to block voltages as high as 1.5kV. In particular, these diodes are realized by surrounding the emitter by a p-type region called junction termination extension (JTE). Electrical...
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