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Silicon carbide (SiC) coating is deposited on C/C composite substrate for the first time by chemical vapor deposition (CVD) with hexamethyldisilylamine (HMDS, C6H19NSi2) as precursor and N2 as carrier gas in an intermediate deposition temperature range. The effects of deposition temperature on phase constitution, surface morphology and deposition rate of the coating are investigated by using X-ray...
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