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We have calculated the band structure of 1.55μm InGaAsP/InGaAsP multi-quantum-well structures using Lüttinger–Kohn Hamiltonian taking into account the strain in the quantum wells (QWs) and barriers, and the confinement in the quantum wells. Using the calculated dispersion curves and oscillator strength between the different interband transitions, we have determined the optical gain in TE and TM mode...
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