The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Wurtzite Cu2ZnSnS4 (CZTS) nanoparticles with bandgaps of about 1.53 eV were synthesized by a simple solvothermal method with ethanediamine (En) as the reaction solvent. The effect of the annealing conditions on the structural stability and photoelectrical properties of wurtzite structured CZTS nanoparticles was detailedly studied. Raman spectra and X-ray photoelectron spectroscopy studies indicated...
The effects of high magnetic field annealing on the inter-diffusion behavior of Co/Si (100) films were investigated using diffusion couple technique. Significant Co and Si inter-diffusion was verified by X-ray photoelectron spectroscopy. The inter-diffusion coefficients of thin-film/semiconductor were calculated. Compared to the no-field case, the inter-diffusion coefficients clearly increased when...
The effect of a high magnetic field on phase formation and determination in Ni–Fe film at nanoscale is reported. The bcc structure of the film changed to the coexistence of bcc and fcc phases by increasing the substrate temperature from 25 to 200 to 400 °C without magnetic field. Under a 6 T magnetic field, a coexistence of bcc and fcc phases was formed whatever structures the films prepared without...
GaN films were deposited on indium tin oxide (ITO) coated glass substrates at various deposition temperatures using an electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa and N 2 are applied as precursors of Ga and N, respectively. The crystalline quality and photoluminescence properties of as-grown GaN films are systematically investigated...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.