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The planar ultrathin body and buried oxide fully depleted silicon-on-insulator (FDSOI) technology is one of the proper candidates to replace bulk CMOS due to its high volume, low cost, and lower power. In this paper, we investigate the performance of hybrid magnetic-MOS non-volatile (NV) magnetic flip-flops (MFFs) in the FDSOI technology. The NV-MFF performance parameters, e.g., active power, leakage...
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