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The dependence of the defect structure on substrate misorientation is investigated in InGaAs/GaAs(111) multiple quantum well heterostructures. Samples were simultaneously grown by molecular beam epitaxy on GaAs(111)B substrates misoriented 1 ° off towards [–11] and 2 ° off towards [2] under optimized growth conditions for both off-axis substrates. For both substrate misorientations two different dislocation...
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