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The polarity of the resistive switching (RS) characteristic of metal‐oxide‐metal devices from atomic layer deposited polycrystalline ZrO2 films was studied by means of impedance spectroscopy. Pt/ZrO2/Ti/Pt cells made with 10 nm Ti and 30 nm Pt capping top electrodes, served as unipolar switching (US) devices. Bipolar switching (BS) devices were represented by Pt/ZrO2/30 nm TiN cells. Temperature measurements...
Thin ZrO2 films and ZrO2/TiO2 bilayers grown by atomic layer deposition (ALD) are integrated into metal–oxide–metal (MOM) structures for investigation of resistive switching (RS) properties. The films have different microstructure depending on the used ALD oxygen source and stacking sequence for the bilayers. Pt/ZrO2/Ti/Pt devices show unipolar RS for oxide thicknesses of 11–18 nm. The devices with...
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