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In this paper, back‐channel‐etch structure TFTs with copper electrodes were manufactured using Indium‐Gallium‐Zinc oxide (IGZO) and Lanthanide rare earth element doped Indium‐Zinc oxide (Ln‐IZO) as the active layer. After researching the influence of different copper etchants on oxide films and device performance, we recommended fluorine‐free copper etchant. Furthermore, the application of an heavily...