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In the present study, the surface morphology using atomic force microscopy (AFM) and the optical properties by Raman Spectroscopy has been used to understand the modification in the 4H-SiC and 6H-SiC wafers due to the low energy He ion implantations. The AFM results show that the He implantation manifests swelling of the surface of the samples. It is also observed that the surface roughness of the...
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