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Phase Change Memory (PCM) is one of the most promising technologies among emerging non-volatile memories. PCM stores data in crystalline and amorphous phases of the GST material using large differences in their electrical resistivity. Although it is possible to design a high capacity memory system by storing multiple bits at intermediate levels between the highest and lowest resistance states of PCM,...
The resistance switching characteristics of Cu doped HfO2 film are investigated for nonvolatile memory. Two stable states can be achieved under both pulse and DC electrical stress. Good performances including large storage window, fast operation speed, good endurance, and long time retention are shown in this device. The metallic filament is confirmed as the physical origin for resistance switching...
ZrO2-based resistive random access memory devices composed of a thin Cu doped ZrO2 film sandwiched between an oxidizable top electrode and an inert bottom electrode are fabricated by e-beam evaporation at room temperature. The devices show reproducible nonpolar resistive switching. The formation and annihilation of localized conductive filaments is suggested to be responsible for the resistive switching...
1T1R-architecture devices were fabricated by integrating ZrO2 based crossbar structure ReRAM onto a foundry-built MOSFET platform. Multilevel operation was realized by using the current limit of a selected cell transistor in the set process. The current level was determined by the transistor's gate voltage, resulting in the control of electrical resistance of the filamentary conductive paths in the...
Dynamic Random Access Memory (DRAM) has been used in main memory design for decades. However, DRAM consumes an increasing power budget and faces difficulties in scaling down for small feature size CMOS processing technologies. Compared to conventional DRAM, emerging phase change random access memory (PRAM) demonstrates superior power efficiency and processing scalability as VLSI technologies and integration...
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