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The effect of buffer layer annealing on the growth of (001)-textured 3 nm thick MnGa films with perpendicular magnetic anisotropy (PMA) was investigated. The film stacking of Si/SiO2 substrate/MgO/Cr/CoGa/MnGa was fabricated by magnetron sputtering. It was found that the CoGa buffer layer crystallized with a (001) orientation and B2 chemical ordering even without any thermal treatments. Interestingly,...
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