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Density functional theory calculations were performed to study the adsorption and incorporation of silicon atoms over GaN (112̅0) and GaN(101̅0) aiming to gain insight into epitaxial growth of two-dimensional layers of silicon nitride (SiNx) on the GaN nonpolar surfaces. Results show that the adsorption of silicon atoms on the bridge sites is energetically more favored as compared with other possible...
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