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Experiments and modeling of functional heterojunction phototransistors (FPTs) are reported for comparing to HPTs without base electrode and conventional HPTs with a base electrode using the same epi-layers. Functional phototransistors having double emitters with different area ratio (A1:A2) but a fixed total area together with collector form a three-terminal device. As a voltage-bias emitter instead...
A homotype negative differential resistance (NDR) device with GaAs delta-doped structure prepared by molecular beam epitaxy is demonstrated. Two Si and one Be delta-doped planes were inserted into the GaAs layer, i.e. n- delta n/sup +/-i- delta p/sup +/-i delta n/sup +/-n, to form the required resonant tunnelling structures. Electrons are thus transported from the conduction band of the n/sup +/ layer...
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