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GaN x As 1−x multiple-quantum-well (MQW) samples (x≤0.025) grown by molecular beam epitaxy have been studied by photoluminescence (PL) spectroscopy, high-resolution X-ray diffraction (HR-XRD), secondary-ion mass spectrometry (SIMS) and ultra-high-resolution infrared local-vibrational-mode (IR LVM) spectroscopy in order to determine their compositional and structural properties. Compositional...
The potential of GaAs-based dilute nitride alloys, such as GaNAs and GaInNAs, for use in long-wavelength telecommunication applications has led to intensive research into their growth and physical properties. In order to produce high quality GaNAs-based devices it is essential that the material and growth source is fully characterised. In this paper, we present a study of MBE grown dilute GaN ...
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