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We investigated the influence of extremely high doping concentrations on the sheet resistance of ion implants annealed by FLA. As the implant depth was ultra-shallow and the amount of dopant atoms high, the concentration of dopant near the surface was exceedingly high, above the solid solubility limit, resulting in high Rs. The cause of this is mainly due to the formation of clusters, which was confirmed...
We studied dopant (boron) activation using flash lamp annealing (FLA) from a view of depth dependence in silicon substrate. As FLA is an annealing method by which temperatures of surface region only rump up and down rapidly, the dopants in deep region of wafer might be unable to be activated. We confirmed that carrier concentration in deep region activated by FLA was surely low compared with that...
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