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In this paper, we investigated the growth of GaN pn-junction layers on silicon (111) by plasma assisted molecular beam epitaxy (PA-MBE) system and the effect of thermal annealing of Ni/Ag contacts on the sample for photodetector applications. Si and Mg were used as n- and p-dopants, respectively. The reflection high energy electron diffraction images indicated a good surface morphology of GaN pn-junction...
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