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Reported is an investigation into the effect of very low plasma power on the electrical characteristics of ohmic contacts to etched p-GaN, by using very low radio frequency (RF) etching power and inductively coupled plasma (ICP) power. The results, assessed by current-voltage (I-V) characteristics and transfer length method analysis, indicate that the ohmic contacts to the etched material were improved...
We report on the electrical characterisation of etched Mg-doped p-GaN layers using low power inductively coupled plasma reactive ion etching (ICP-RIE). Although the quality of ohmic contacts to p-GaN is generally degraded by plasma etching, the results, assessed by current-voltage characteristics and Transmission Line Model (TLM) analysis, indicate that the ohmic contacts improve significantly as...
Vertical n-p junction diodes were fabricated by Si+ ion implantation into Mg doped p/p+ GaN, followed by rapid thermal annealing at 1260degC in NH3/N2 for 30 s. Implantations were performed at 40, 60 and 80 keV and circular contacts on the n-region were fabricated with various diameters between 100 and 600 mum. Light emission from the periphery of the contact under forward bias conditions confirmed...
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