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A two-stage AlGaN/GaN MMIC on high pure SiC (HP-SiC) substrate for X band frequency was designed and manufactured. The MMIC had a CW output power of over 10W, 12dB power gain from 9.1GHz to 10.GHz and with a gain flatness of 0.3dB.
High-performance internally-matched GaN HEMT with 0.3 mum gate length and 4times2.5 mm of the total gate width was successfully fabricated. The large signal RF characteristics of the internally-matched device were measured at 8 GHz. A maximum output power of 64.5 W, a gain of 7.2 dB and a peak power-added efficiency (PAE) of 40% was obtained, respectively.
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