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The aim of this work is to compare the isothermal crystallization kinetic in the films along GeTe-Sb2Te3 line with composition Ge2Sb2Te5, Ge1Sb2Te4, Ge1Sb4Te7 and Ge4Sb1Te5 using mainly Johnson-Mehl-Avrami-Kolmogorov (JMAK) model. Results obtained have shown different crystallization mechanism in the investigated films. In Ge2Sb2Te5 and Ge1Sb2Te4 films the analysis of the kinetic results (Avrani coefficient)...
The aim of this work is to investigate the amorphous-to-crystalline phase transformation process in Ge2Sb2Te5 ternary alloys. The experiments were carried out using impedance and X-ray diffraction measurements. The results have shown that the crystallization process in an amorphous Ge2Sb2Te5 alloy starts from nuclei, which appear below Tc and which were identified as the crystalline Ge1Sb4Te7. As...
Ge:Sb:Te thin films have been studied extensively due to their application in phase-change optical memory technology. In this work Ge:Sb:Te:O films with oxygen in the range between 2 to 28 atomic %, are analyzed using X-ray diffraction and XPS measurements. The location of the oxygen in the structure of these films has been deduced from these measurements. Experimental results have shown that in films...
The effect of monomer and electrolyte (LiCF 3 SO 3 ) concentrations on the nucleation and growth processes of polythiophene, poly(3-methythiophene) and poly(3-hexylthiophene) electrogenerated on a platinum electrode in an acetonitrile media were studied. The current transients were fitted using a mathematical equation that considers up to seven contributions, each of them representing...
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