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The aim of this paper is to present results of experimental research and find out correlation between structural and optical properties of a-Si:H layers exposed to an influence of ion beam of very low energy. We have characterized the virgin and bombarded layers of a-Si:H by the following techniques: infrared spectroscopy (IR), X-ray diffraction at grazing incidence (XRDGI) and scanning electron microscopy...
This paper deals with the formation of very thin insulating layers on crystalline (GaAs) and amorphous semiconductors (a-Si:H and a-SiGe:H) prepared by the impacts of particles of a very low energy. Plasma, ion beams and plasma immersion ion implantation (PIII) as the sources of impacting particles were used and compared. The last technique was applied successfully for the first time in the case of...
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