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The hot-carrier effect (HCE) in different channel length NMOSFETs is studied in this letter. It is found that the HCE becomes more serious with the channel length decreasing, which results in serious degradations of the threshold voltage and saturation drain current. Moreover, the relationships of the Stress Induced Leakage Current (SILC) degradation versus the threshold voltage and worst substrate...
Based on the Reaction-Diffusion framework, an improved NBTI model is proposed with the consideration of moving diffusion front in oxide and poly-Si layer. The dependence of degradation on channel length and width is taken into account simultaneously for the first time. The model is implemented with Verilog-A to be compatible with commercial simulators and verified by experimental data.
The photocatalytic activity composite films incorporating the Keggin-type polyoxometalates (POM) K 6 CoW 12 O 40 ·16H 2 O and K 3 PW 12 O 40 ·nH 2 O (MW 12 (M=P, Co)) and [Cu(II)(1,8-dimethyl-1, 3, 6, 8, 10, 13-hexaazacycloteradecane)] 2+ (L) have been prepared by the layer-by-layer (LbL) self-assembly method. The experimental...
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