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The impact of aluminum carbide (Al4C3) at the metal/silicon-carbide (SiC) interface is presented here with respect to 4H-SiC Schottky barrier diodes (SBDs). A post-annealing process at a high temperature (1000°C) has been employed for the reaction between the aluminum and the carbon. The current density of the fabricated device was measured as ~ 13.4A/cm2 at 5V with a leakage current density of less...
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