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The Ba(Zr0.35Ti0.65)O3 (BZT) thin films were deposited via sol-gel process on LaNiO3-coated silicon substrates. XRD showed that the crystallinity of BZT film grown on LaNiO3 coated silicon substrates is better than that of BZT film grown on Pt. Both films showed perovskite phase and polycrystalline structure. The temperature dependent dielectric measurements revealed that the thin films had the relaxor...
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