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Wafer-scaled cost-effective technique for subwavelength structured (SWS) surface by means of anodic porous alumina masks directly formed on SiO2/Si substrates is demonstrated. Combined with ion beam etching and induced coupled plasma etching, SWS surface with a period of 100nm and a height of 200-300nm was achieved on 2 inch polished single crystalline Si wafer. A lower reflectivity below 6% was observed...
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