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The self-assembled InAs quantum dots (QDs) on Si substrate with high density (7.5×1010 cm-2) were achieved using relatively lower growth temperature by low-pressure metal-organic chemical vapor deposition. The PL spectra exhibit 1.3μm emission from InAs quantum dots at room temperature. PL measurements at 77K, Full Width at Half-Maximum (FWHM) is about 60meV.
Quantum dot (QD) solar cells have been proposed as a means to exceed the Shockley and Queisser efficiency limit of 31%, via the absorption of sub-band-gap photons, conventionally lost in a single junction solar cell (SC). Previous reports on fabricated InAs/GaAs QDSCs showed a slight increase in photoresponse, due to below-band gap absorption. However, they all showed a severe degradation of open...
Room-temperature continuous wave lasing in quantum dots covered with GalnNAs on GaAs substrate was attained at 1.31 μm with threshold current density of 0.4 kA/cm2 by metal-organic chemical vapor deposition. The range of continuous wave lasing was extended to 1.33 μm with using a thin p-clad layer.
Ground state lasing above 1.30 mum (1.34 mum) was obtained for the first time from InAs quantum dots grown on GaAs substrate by metal organic chemical vapor deposition.
Self-assembled InAs quantum dot (QD) lasers emitting at 1.29 mum on GaAs substrates grown by metalorganic chemical vapor deposition (MOCVD) were achieved by using GaInNAs embedding layers. This emission wavelength is the longest wavelength ever reported for QD lasers grown by MOCVD
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