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We have measured the time response of the emission spectra of In 0.07Ga0.93N quantum wells with widths of 2, 3, and 4nm in GaN following pulsed optical excitation. We observe a blue shift of the emission peak during the excitation and a subsequent red shift as the carriers recombine in the 3- and 4-nm wells, and a negligible shift for the 2-nm well. Using a comprehensive theory we are able to fit...
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