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In this work, we report a systematic study on n- and p-type Al2O3/Ga2O3(Gd2O3) [GGO]/In0.2Ga0.8As/GaAs MOS capacitors (MOSCAPs) using metal gates Al, TiN, and Ni of work functions of 4.1, 4.8, and 5.2 V, respectively. We demonstrated for the first time nearly ideal characteristics of the In0.2Ga0.8As based MOSCAPs, and remarkably well-controlled Vth. The GGO/In0.2Ga0.8As with a perfected interface,...
Charge trapping and wearout characteristics of self-aligned enhancement-mode GaAs nMOSFETs with silicon interface passivation layer and HfO2 gate oxide are systematically investigated at various time scales (from micro-seconds to seconds). Unlike high-kappa on silicon devices, both bulk trapping and interface trapping affect the PBTI (positive bias temperature instability) characteristics of nMOSFETs...
The authors have successfully demonstrated self-aligned high-performance inversion-channel In0.53Ga0.47As MOSFETs using UHV-deposited nano-meter thick AI2O3/GGO dual-layer dielectrics and a TiN metal gate. Record-high drain current and transconductance, despite its challenging process, were achieved. Ring gate D-mode In0.2Ga0.8As MOSFETs using as a similar dual layer gate dielectric also exhibits...
For the first time strain additivity on III-V using prototypical (100) GaAs n- and p-MOSFETs is studied via wafer bending experiments and piezoresistance coefficients are extracted and compared with those for Si and Ge MOSFETs. Further understanding of these results is obtained by using multi-valley conduction band model for n-MOS and performing k.p simulations for p-MOS. For GaAs n-MOSFET, uniaxial...
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