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Amorphous SiO x thin films with four different oxygen contents (x=1.15, 1.4, 1.5, and 1.7) have been prepared by thermal evaporation of SiO in vacuum and then annealed at 770 or 970K in argon for various times ⩾40min. The influence of annealing conditions and the initial film composition on photoluminescence (PL) from the annealed films has been explored. Intense room temperature PL has been...
Thin films of SiO x having thickness of 0.2μm and oxygen content x=1.5 or 1.7 are prepared by thermal evaporation of SiO in vacuum. Then some samples are furnace annealed for various times (in the range ta=5–60min) at 770 and 970K and some others are rapid thermal annealed at 970K for 30 and 60s. Photoluminescence (PL) measurements are carried out at room temperature using the 442nm line of...
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