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The effect of crystallinity of Ge nanocrystals on the charge storage properties of the metal oxide semiconductor (MOS) structure has been investigated. MOS structure with Ge nanocrystals embedded in the oxide has been fabricated by using atom beam sputtering technique. After annealing at 600°C in Ar+H 2 atmosphere, capacitance–voltage (C–V) measurements show flat band voltage shift of ∼0.9V...
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