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Particle-tracking detectors made on high-resistivity (HR) float zone (FZ) silicon are widely used in high-energy physics experiments. It is known that the incorporation of oxygen in the FZ Si can lead to some improvement in the radiation hardness of the material. In this contribution we investigate the effects of 2MeV electron irradiation, up to a fluence of 5×10 16 e/cm 2 , on the...
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