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The effect of electron irradiation on n-type Cz- and oxygen-doped FZ-Si containing oxygen-related thermal donors (OTDs) due to a plasma hydrogenation and a subsequent thermal donor formation step at 450°C is investigated by capacitance–voltage (C–V) and deep level transient spectroscopy (DLTS) measurements. In order to explain the electron irradiation induced reduction of the carrier concentration,...
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